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FDMS3008SDC |Fairchild Semiconductor/ onsemi| Low/Medium Voltage MOSFETs

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Update time : 2025-04-28 14:52:11
The Fairchild Semiconductor/onsemi FDMS3008SDC is a high - performance N - Channel MOSFET. With a low on - resistance (rDS(on)​) and the ability to handle high currents, it offers excellent power efficiency. Housed in a Dual CoolTM package for efficient heat dissipation, it features a SyncFET Schottky Body Diode. RoHS compliant, it’s ideal for applications like DC/DC converters, telecom rectification, and high - end server power supply.
 

Fairchild Semiconductor/ onsemi FDMS3008SDC's Features

The FDMS3008SDC N - Channel MOSFET by Fairchild Semiconductor (now part of ON Semiconductor) has several notable features. It comes in a Dual CoolTM Top Side Cooling PQFN package, which offers efficient heat dissipation. The device exhibits a very low on - resistance. Specifically, the maximum rDS(on)​ is 2.6mΩ at VGS​=10V and ID​=28A, and 3.3mΩ at VGS​=4.5V and ID​=22A, achieved through advanced PowerTrench® process. It also features a SyncFET Schottky Body Diode, which provides additional benefits in certain applications. This MOSFET is RoHS compliant, meeting environmental regulations. With its high - performance technology, it can handle high currents, with a continuous drain current of up to 65 A (package - limited at TC​=25∘C) and pulsed drain current of 200 A. These features make it suitable for applications like synchronous rectifier in DC/DC converters, telecom secondary - side rectification, and high - end server/workstation Vcore low - side.
 

Fairchild Semiconductor/ onsemi FDMS3008SDC's Applications

The FDMS3008SDC N - Channel MOSFET from Fairchild Semiconductor (now ON Semiconductor) is designed for a wide range of applications. One of its primary uses is as a synchronous rectifier in DC/DC converters. In these converters, the FDMS3008SDC's low rDS(on)​ is crucial. It helps to minimize power losses during the rectification process, thereby improving the overall efficiency of the DC/DC conversion. This is especially important in applications where energy efficiency is a key concern, such as portable electronics and power - sensitive devices. Another significant application is in telecom secondary - side rectification. The device's ability to handle high currents and its efficient switching performance make it well - suited for this task. In telecom systems, reliable and efficient rectification is essential to ensure stable power supply for various components. It also finds use in high - end server/workstation Vcore low - side applications. The FDMS3008SDC can meet the stringent power requirements of these systems, providing stable and efficient power delivery. Its thermal characteristics, like the Dual CoolTM package for effective heat dissipation, are beneficial in these high - power - consuming environments.
 
 

Fairchild Semiconductor/ onsemi FDMS3008SDC's Attributes

Mfr onsemi Series Dual Cool™, PowerTrench®, SyncFET™
Package Bulk Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 29A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.6mOhm @ 28A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 15 V
FET Feature - Power Dissipation (Max) 3.3W (Ta), 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package Dual Cool™56 Package / Case 8-PowerTDFN
 

Fairchild Semiconductor/ onsemi FDMS3008SDC's Datasheet


 

Fairchild Semiconductor/ onsemi FDMS3008SDC's Category-Low/Medium Voltage MOSFETs 

Low/medium voltage MOSFETs play a crucial role in modern electronics. These metal - oxide - semiconductor field - effect transistors are designed to operate within a voltage range typically from a few volts up to several hundred volts. Their versatility makes them indispensable across numerous applications. One of the key advantages of low/medium voltage MOSFETs is their high efficiency. With low on - resistance (rDS(on)​), they can conduct current with minimal power loss, reducing heat generation and improving overall system performance. This efficiency is particularly valuable in battery - powered devices, where conserving energy extends the operating time. For instance, in smartphones and laptops, low/medium voltage MOSFETs are used in power management circuits to regulate the flow of power between the battery, charger, and various components, optimizing power usage. They also offer fast switching speeds. This characteristic allows them to rapidly turn on and off, enabling high - frequency operation. In applications such as DC/DC converters, this fast switching is essential for achieving high power conversion efficiency and compact circuit designs. By quickly switching the current, low/medium voltage MOSFETs can step up or step down voltages as needed, ensuring a stable power supply for different loads. In addition, low/medium voltage MOSFETs are known for their high input impedance, which reduces the drive current required to control them. This simplifies the design of the gate drive circuits and reduces power consumption in the control stage. Their reliability and long - term stability further contribute to their widespread use in various electronic systems.

Among the diverse range of low/medium voltage MOSFETs, the Fairchild Semiconductor/ onsemi FDMS3008SDC stands out. This N - Channel MOSFET combines all the key benefits of low/medium voltage devices. With its extremely low rDS(on)​, it maximizes power efficiency, making it an ideal choice for applications like synchronous rectification in DC/DC converters. Its fast switching speed and high - current - handling capability also make it suitable for telecom secondary - side rectification and high - end server/workstation Vcore low - side applications. The advanced packaging and design of the FDMS3008SDC, along with its compliance with environmental standards, further demonstrate how it embodies the best qualities of low/medium voltage MOSFETs, meeting the demanding requirements of modern electronic systems.
 

FDMS3008SDC vs SQJQ410EL-T1_GE3

Part Number
FDMS3008SDC  +BOM

SQJQ410EL-T1_GE3 +BOM
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor Vishay Siliconix
Description MOSFET N-CH 30V 29A DUAL COOL56 MOSFET N-CH 100V 135A PPAK 8 X 8
Package Bulk Jinftry-Reel®
Series Dual Cool™, PowerTrench®, SyncFET™ Automotive, AEC-Q101, TrenchFET®
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN PowerPAK® 8 x 8
Supplier Device Package 8-PQFN (5x6) PowerPAK® 8 x 8
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Power Dissipation (Max) 3.3W (Ta), 78W (Tc) 136W (Tc)
FET Type N-Channel N-Channel
FET Feature - -
Drain to Source Voltage (Vdss) 30 V 100 V
Current - Continuous Drain (Id) @ 25°C 29A (Ta) 135A (Tc)
Rds On (Max) @ Id, Vgs 2.6mOhm @ 28A, 10V 3.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 1mA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 4520 pF @ 15 V 7350 pF @ 25 V
Vgs (Max) ±20V ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
 
WlS Electronic has a vast inventory of Fairchild Semiconductor/onsemi FDMS3008SDC. We guarantee that these are authentic and brand - new components sourced directly from Fairchild Semiconductor/onsemi. If required, we can provide quality test reports for the FDMS3008SDC. To get a quotation, simply fill in the desired quantity, your contact name, and your email address in the quick quotation form on the right - hand side. Our sales representatives will reach out to you within 12 hours. You can contact us online at any time. Moreover, you may send us an email at: SALES@WLSCHIP.COM.
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