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Infineon introduces first trench power MOSFET in OptiMOS™ 7 technology 15 V PQFN package

Update time : 2024-01-05 10:08:46

The growing demand for power supplies in data centers and computing applications requires more efficient and compact power supply designs.

Infineon Technologies AG is responding to this trend at the system level with the new OptiMOS™ 7 series, the industry's first 15 V trench power MOSFETs. The OptiMOS™ 7 15 V series boosts DC-DC conversion in servers, computing, data centers and artificial intelligence applications.
The semiconductor portfolio includes the latest PQFN 3.3 x 3.3 mm² Source-Down packages with bottom-cooled and double-side-cooled options in both standard gate-level and gate-centered pinouts, as well as the stable and reliable ultra-small PQFN 2 x 2 mm² packages. OptiMOS™ 7 15 V technology is customized for DC-DC conversion at low output voltages and is especially suited for server and computing environments. This advanced technology is in line with the new trend of 48:1 DC-DC conversion in data center power distribution.
The new OptiMOS™ 7 15 V reduces RDS(on) and FOM Qg by about 30% and FOM QOSS by about 50% by lowering the breakdown voltage compared to the existing OptiMOS5 25 V. The PQFN 3.3 x 3.3 mm² source-under-mount package model offers more flexible and optimized PCB design. The PQFN 2 x 2 mm² package has a pulse current capability of more than 500 A and a typical RthJC of 1.6 K/W. Simplified thermal management by minimizing conduction and switching losses and using advanced packaging techniques sets new benchmarks for power density and overall efficiency.
The OptiMOS 7 15 V product portfolio is available for ordering now and is offered in two package sizes: PQFN 3.3 x 3.3 mm² source-under-mount package and PQFN 2 x 2 mm² package.

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