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The Nexperia has released a new product to help make the battery life last longer

Update time : 2022-07-28 14:05:44

Nexperia, a high-capacity production expert in the field of basic semiconductor devices, today announced the launch of pmcb60xn and pmcb60xne 30V n-channel small signal trench MOSFET, which are packaged in ultra compact wafer level dsn1006 and have market-leading RDS (on) characteristics. Under the conditions of limited space and battery life, it can make power more durable.

The new MOSFET is very suitable for highly miniaturized electronic products such as smart phones, smart watches, hearing aids and headphones. It caters to the trend of more intelligence and richer functions, and meets the demand of increasing system power consumption.
Compared with competitive devices, RDS (on) has a performance improvement of 25%, which can minimize energy consumption and improve the efficiency of load switching and battery management. Its excellent performance is also reflected in the reduction of self heating, thereby enhancing the user comfort of wearable devices.
Specifically, when VGS =4.5v, the maximum RDS (on) of pmcb60xn and pmcb60xne are 50m Ω and 55m Ω respectively. Therefore, among similar 30V MOSFETs in the market, pmcb60xn and pmcb60xne have the lowest on resistance in a single chip area. In addition, pmcb60xne is integrated at 1.0mm × 0.6mm × In the 0.2mm dsn1006 small shape, it can also provide rated 2KV ESD protection (manikin – HBM). The rated drain current of these two MOSFETs can reach up to 4a.
In addition to the two MOSFETs packaged with dsn1006, Nexperia also launched a 12V n-channel trench MOSFET pmca14un packaged with dsn1010. The maximum RDS (on) of pmca14un at VGS = 4.5 V is 16m Ω, at 0.96mm × 0.96mm × Market leading efficiency at the size of 0.24mm (sot8007).

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