IRFBC30

Item No.: IRFBC30
Part number: IRFBC30
Package: TO-220-3
Brand:  STMicroelectronics
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Description
     The IRFBC30 is a N-Channel Power MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.
 

Features

  • High reliability and durability: The IRFBC30 is designed with robust construction and materials to ensure a long lifespan and withstand harsh operating conditions.
  • Good electrical insulation properties: This MOSFET features excellent insulation between the gate, drain, and source pins, reducing the risk of electrical shock or damage.
  • Small power loss during operation: The IRFBC30 is optimized for low-power consumption, making it suitable for battery-powered devices or applications where energy efficiency is crucial.
  • Robust electromagnetic immunity: This component is designed to withstand electromagnetic interference (EMI) and radio-frequency interference (RFI), ensuring reliable operation in noisy environments.
  • High temperature range operation: The IRFBC30 can operate safely within a wide temperature range, making it suitable for use in various applications, from consumer electronics to industrial control systems.
  • Good surge overload capability: This MOSFET is designed to handle sudden surges or overloads without compromising its performance or lifespan.
  • Fault tolerance and redundancy options: The IRFBC30 can be used in fault-tolerant systems, allowing for continued operation even if one component fails. Redundancy options are also available for critical applications.
  • High density package layout: The TO-220AB package is designed to minimize space requirements while maintaining optimal thermal performance and electrical characteristics.
  • Low electromagnetic radiation emission: This component emits minimal electromagnetic radiation, reducing the risk of interference with other devices or systems.
  • Ease of thermal management: The IRFBC30 features a thermally efficient design, making it easier to manage heat dissipation and maintain optimal operating temperatures.
  • Fast response time to input signals: This MOSFET responds quickly to input signals, ensuring fast switching times and minimal latency in digital signal processing applications.
  • Low input noise and distortion: The IRFBC30 is designed to minimize input noise and distortion, providing a clean and accurate signal output.
  • Low input capacitance: This component features low input capacitance, reducing the risk of signal degradation or distortion in high-frequency applications.
  • Robust construction for harsh environments: The IRFBC30 is designed to withstand harsh operating conditions, including extreme temperatures, humidity, and vibration.
 

Applications

The IRFBC30 is suitable for a wide range of applications, including:

  • Power supplies and converters: This MOSFET can be used in power supply and converter designs to regulate voltage and current.
  • Motor control systems: The IRFBC30 is suitable for motor control systems, allowing for precise speed and direction control.
  • Audio equipment and amplifiers: This component can be used in audio equipment and amplifier designs to provide high-quality signal processing and amplification.
  • Industrial control systems: The IRFBC30 is suitable for industrial control systems, allowing for precise control of motors, pumps, and other devices.
  • Consumer electronics: This MOSFET can be used in consumer electronics, such as smartphones, tablets, and laptops, to provide power management and signal processing capabilities.

 

Specifications

Product Category MOSFET                          RoHS N
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 3.6 A Rds On - Drain-Source Resistance 2.2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 75 W
Channel Mode Enhancement Series IRFBC30
Brand STMicroelectronics Configuration Single
Fall Time 19 ns Height 9.15 mm
Length 10.4 mm Product Type MOSFET
Rise Time 14 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Width 4.6 mm Unit Weight 0.068784 oz



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