The IRFBC30 is a N-Channel Power MOSFET optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching.
Features
- High reliability and durability: The IRFBC30 is designed with robust construction and materials to ensure a long lifespan and withstand harsh operating conditions.
- Good electrical insulation properties: This MOSFET features excellent insulation between the gate, drain, and source pins, reducing the risk of electrical shock or damage.
- Small power loss during operation: The IRFBC30 is optimized for low-power consumption, making it suitable for battery-powered devices or applications where energy efficiency is crucial.
- Robust electromagnetic immunity: This component is designed to withstand electromagnetic interference (EMI) and radio-frequency interference (RFI), ensuring reliable operation in noisy environments.
- High temperature range operation: The IRFBC30 can operate safely within a wide temperature range, making it suitable for use in various applications, from consumer electronics to industrial control systems.
- Good surge overload capability: This MOSFET is designed to handle sudden surges or overloads without compromising its performance or lifespan.
- Fault tolerance and redundancy options: The IRFBC30 can be used in fault-tolerant systems, allowing for continued operation even if one component fails. Redundancy options are also available for critical applications.
- High density package layout: The TO-220AB package is designed to minimize space requirements while maintaining optimal thermal performance and electrical characteristics.
- Low electromagnetic radiation emission: This component emits minimal electromagnetic radiation, reducing the risk of interference with other devices or systems.
- Ease of thermal management: The IRFBC30 features a thermally efficient design, making it easier to manage heat dissipation and maintain optimal operating temperatures.
- Fast response time to input signals: This MOSFET responds quickly to input signals, ensuring fast switching times and minimal latency in digital signal processing applications.
- Low input noise and distortion: The IRFBC30 is designed to minimize input noise and distortion, providing a clean and accurate signal output.
- Low input capacitance: This component features low input capacitance, reducing the risk of signal degradation or distortion in high-frequency applications.
- Robust construction for harsh environments: The IRFBC30 is designed to withstand harsh operating conditions, including extreme temperatures, humidity, and vibration.
Applications
The IRFBC30 is suitable for a wide range of applications, including:
- Power supplies and converters: This MOSFET can be used in power supply and converter designs to regulate voltage and current.
- Motor control systems: The IRFBC30 is suitable for motor control systems, allowing for precise speed and direction control.
- Audio equipment and amplifiers: This component can be used in audio equipment and amplifier designs to provide high-quality signal processing and amplification.
- Industrial control systems: The IRFBC30 is suitable for industrial control systems, allowing for precise control of motors, pumps, and other devices.
- Consumer electronics: This MOSFET can be used in consumer electronics, such as smartphones, tablets, and laptops, to provide power management and signal processing capabilities.
Specifications
Product Category |
MOSFET |
RoHS |
N |
Technology |
Si |
Mounting Style |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Polarity |
N-Channel |
Number of Channels |
1 Channel |
Vds - Drain-Source Breakdown Voltage |
600 V |
Id - Continuous Drain Current |
3.6 A |
Rds On - Drain-Source Resistance |
2.2 Ohms |
Vgs - Gate-Source Voltage |
- 20 V, + 20 V |
Minimum Operating Temperature |
- 65 C |
Maximum Operating Temperature |
+ 150 C |
Pd - Power Dissipation |
75 W |
Channel Mode |
Enhancement |
Series |
IRFBC30 |
Brand |
STMicroelectronics |
Configuration |
Single |
Fall Time |
19 ns |
Height |
9.15 mm |
Length |
10.4 mm |
Product Type |
MOSFET |
Rise Time |
14 ns |
Factory Pack Quantity |
1000 |
Subcategory |
MOSFETs |
Transistor Type |
1 N-Channel |
Width |
4.6 mm |
Unit Weight |
0.068784 oz |
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