The LSM115JE3/TR13 is a high-performance LDMOS transistor designed for RF power amplifier applications in the frequency range of X-Band radar systems. This transistor offers high power gain, efficiency, and reliability, making it ideal for demanding RF applications.
Key Features
- X-Band Radar Applications: Suitable for RF power amplifier applications in X-Band radar systems.
- High Power Gain: Offers high gain to amplify RF signals effectively.
- Efficiency: Provides efficient power amplification for improved system performance.
- Reliability: Ensures reliable operation under demanding RF conditions.
Application
- RF Power Amplification: Ideal for use in RF power amplifiers for X-Band radar systems.
- Radar Systems: Suitable for integration into radar systems requiring high-power RF amplification.
- Wireless Communication: Used in applications where high power RF signals are necessary for wireless communication.
Specifications
| Product Category |
Schottky Diodes & Rectifiers |
RoHS |
Details |
| Product |
Schottky Rectifiers |
Package / Case |
DO-214BA-2 |
| Configuration |
Single |
Technology |
Si |
| If - Forward Current |
1 A |
Vrrm - Repetitive Reverse Voltage |
15 V |
| Vf - Forward Voltage |
220 mV |
Ifsm - Forward Surge Current |
50 A |
| Ir - Reverse Current |
10 mA |
Minimum Operating Temperature |
- 65 C |
| Maximum Operating Temperature |
+ 125 C |
Brand |
Microchip Technology |
| Product Type |
Schottky Diodes & Rectifiers |
Factory Pack Quantity |
3000 |
| Subcategory |
Diodes & Rectifiers |
Type |
Schottky Rectifier |
| Vr - Reverse Voltage |
15 V |
Unit Weight |
0.008289 oz |
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