STMicroelectronics and Soitec collaborate on silicon carbide substrate manufacturing technology: 8-inch SiC wafers to be built
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Update time : 2023-01-04 10:17:11
STMicroelectronics (ST) and Soitec, a semiconductor materials design and manufacturing company, have announced the next phase of their silicon carbide (SiC) substrate collaboration, with ST completing pre-production qualification testing of Soitec's SiC substrate technology over the next 18 months. The goal of the partnership is for ST to use Soitec's SmartSiC technology to manufacture future 8-inch silicon carbide substrates to boost the company's silicon carbide device and module manufacturing business and to achieve volume production in the medium term.
Silicon carbide (SiC) is a disruptive compound semiconductor material whose inherent properties enable better performance and energy efficiency than silicon-based semiconductors in critical, high-growth power applications in electric vehicles and industrial processes. -- all of which are key parameters and elements of successful automotive and industrial systems. Upgrading from 6-inch wafers to 8-inch wafers can almost double the available area for manufacturing integrated circuits, with 1.8-1.9 times the effective yield per wafer prior to the upgrade, resulting in a significant increase in capacity. SmartSiC is Soitec's proprietary technology, based on Soitec's proprietary SmartCut technology, which cuts a thin layer from a high-quality silicon carbide donor wafer and bonds it to the surface of the low-resistance polysilicon wafer to be processed. The result is a substrate with improved chip performance and manufacturing yields. In addition, high quality silicon carbide donor wafers can be reused multiple times, thus significantly reducing the total energy consumption for donor processing.
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