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Nexperia's First SiC MOSFETs Raise the Bar for Safety, Robustness and Reliability in Industrial Power Switching Applications

Update time : 2023-12-08 10:33:13

Nexperia, the high-volume manufacturing specialist in basic semiconductor devices, today announced the availability of its first Silicon Carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packages with an RDS(on) of 40 mΩ and 80 mΩ, respectively. the NSF040120L3A0 and NSF080120L3A0 are the first products to be released in Nexperia's SiC MOSFET portfolio. The NSF040120L3A0 and NSF080120L3A0 are the first releases in Nexperia's SiC MOSFET portfolio, and Nexperia will continue to expand the product lineup with a variety of devices with different RDS(on)s in both through-hole and surface mount packages. The two devices introduced this time have high availability to meet the demand for high-performance SiC MOSFETs in automotive and industrial applications such as electric vehicle (EV) charging piles, uninterruptible power supplies (UPSs), and solar and energy storage system (ESS) inverters.

Nexperia and Mitsubishi Electric hope that these two first products will spark more innovation and drive the emergence of more wide-bandwidth device suppliers in the market," said Katrin Feurle, senior director and head of the SiC product group at Nexperia, "Nexperia is now able to offer SiC MOSFETs that outperform their competitors in several Nexperia now offers SiC MOSFETs that outperform their competitors in a number of parameters, such as high RDS(on), good temperature stability, low body diode drop, tight threshold voltage specifications, and extremely balanced gate charge ratios to safely and reliably prevent parasitic conduction. This is the beginning of our commitment with Mitsubishi Electric to produce high-quality SiC MOSFETs. There is no doubt that together we will push the boundaries of SiC device performance for years to come."
Toru Iwagami, Senior General Manager, Power Device Business, Semiconductor & Devices Division, Mitsubishi Electric, said, "We are pleased to join forces with Nexperia to introduce these new SiC MOSFETs, which are the first products to be launched as a result of our collaboration. Mitsubishi Electric has accumulated extensive expertise in SiC power semiconductors, and our devices achieve an excellent balance of multifaceted characteristics."
RDS(on), which affects conduction power loss, is a key performance parameter for SiC MOSFETs.Nexperia has found that it is also a factor that contributes to the performance limitations of many SiC devices currently on the market.The newly introduced SiC MOSFETs utilize innovative process technology to achieve industry-leading temperature stability, with RDS(on) in the 25°C to 175°C operating temperature range. (on) increases by only 38 percent of its nominal value.
Nexperia SiC MOSFETs have a very low total gate charge (QG), resulting in lower gate drive losses. In addition, Nexperia balances the gate charge so that the QGD to QGS ratio is very low, a feature that further increases the device's immunity to parasitic conduction.
In addition to the positive temperature coefficient, Nexperia's SiC MOSFETs have an ultra-low inter-device threshold voltage, VGS(th), which enables very balanced current-carrying performance under both static and dynamic conditions when the devices are operated in parallel. In addition, the lower body diode forward voltage (VSD) contributes to improved device robustness and efficiency, while also easing dead-time requirements for asynchronous rectifier and current-continuation operations.
Nexperia also has future plans to introduce automotive-grade MOSFETs. the NSF040120L3A0 and NSF080120L3A0 are now in high-volume production. Please contact a Nexperia sales representative for a complete set of SiC MOSFET samples.

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