Samsung Electronics faces tough challenge in memory chip sector as Chinese, US and local rivals come together
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Update time : 2023-01-31 10:07:52
According to BusinessKorea, Samsung Electronics has held the number one position in the global DRAM and NAND flash memory markets for 30 and 20 years respectively. However, chip makers in China and the US have begun to threaten its technological leadership.
Micron Technology, the largest US storage semiconductor company, announced mass production of the world's first 232-layer NAND flash memory in July 2022, when Samsung Electronics was making 176-layer NAND flash memory, the report said. The head of a Canadian semiconductor consulting firm even claimed that China's Changjiang Storage produced 232-layer NAND flash before Micron.
Also, local Korean rival SK Hynix announced last year that it had successfully developed the world's most multilayer (238-layer) NAND flash memory. Samsung Electronics, on the other hand, began mass production of 236-layer NAND flash memory in November 2022.
Currently, Samsung Electronics is the market leader in DRAM and NAND flash memory, with a market share gap of more than 10% with its competitors. As of the third quarter of 2022, the DRAM market was led by the "Big Three" - Samsung Electronics (40.6%), SK Hynix (29.9%) and Micron (24.8%). In the NAND flash market, Samsung Electronics (31.6%), Armor Man (21.1%), SK Hynix (19%), Western Digital (12.4%) and Micron (11.8%) are competing fiercely.
Despite the large market share gap, competitors are rapidly eroding Samsung's technological dominance. "It is reported that the quality of CK Storage's 232-layer NAND is unexpectedly high, so Samsung is very concerned and interested in this." An industry source said.
In addition, an industry analyst said, "In the memory sector, Samsung is being caught up by latecomers, while in the foundry business, TSMC is way ahead. Samsung is facing a huge challenge."
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