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Samsung's Petabyte solid-state drive, which targets 3D NAND technology, will not be available until 2030

Update time : 2023-04-04 14:02:35

Samsung has discussed its plans to provide up to PB of capacity in future 3D NAND technology solid-state drives, although these technologies may be available in a decade.

At this year's China Flash Memory Market Summit (CFMS023), Samsung Electronics, along with other well-known flash memory companies such as Micron, Kioxa, Arm, Solidigm, and Physon, attended the meeting. Samsung Electronics discussed with the audience the topic of "re evolution of flash memory and moving towards a new era". This discussion highlighted the company's high level of storage capacity capabilities and the difficulty of achieving such high capacity in its 3D NAND flash drives.
Kyungryun Kim, Vice President/General Manager of Samsung Electronics NAND Product Planning Group, explained that three levels of technology - physical expansion, logical expansion, and packaging technology - are not only developing, but can theoretically reach a capacity of 1 PB or 1024 TB. However, according to current technical standards, the company will not be able to achieve this goal in the next decade. In addition, the company is seeking to apply Level 4 cell technology to more storage devices, and is focusing on making the technology more skilled.
In discussing the evolutionary path to reaching five levels of capacity, the company also demonstrated the PM1743 series PCIe 5.0 solid state drives (SSDs). The new PM1743 series is 40% more energy efficient than previous models and has been tested for compatibility with Intel and AMD PCIe Gen 5 platforms.
Samsung has been silent when discussing its technological advances, especially 3D NAND memory. The company is continuing to find ways to bring the four stage unit 3D NAND device to the public with a wider adoption rate. Samsung believes that focusing on updated controller technology will achieve these goals. Currently, the company is physically expanding 3D NAND devices. However, the company needs to study logical extensions to allow memory devices to access more than 1000 layers. Logical scaling will allow for an increase in the number of bits of information stored within each unit.
Although the company has been silent about its technology, competitor Kioxia is more transparent about its development. In 2019, the company introduced a five-level cell 3D NAND memory, with a maximum storage capacity of 5 bits (5 bpc) per cell. Two years later, Kioxia broke through the technology of 5 barrels per day, reaching 6 barrels per day. The company said it was also studying whether it could be upgraded to 8bpc to create an 8-level unit 3D NAND storage device. Currently, the company has not reached this length.
Storing multiple bits per unit poses many challenges for many 3D NAND manufacturers. Identifying materials that can store various voltage states while being able to distinguish them to prevent interference is one of the obstacles that all companies are currently striving to overcome. In addition, as the number of bits per unit increases, they need to develop error correction techniques to maintain data integrity.

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