NXP Introduced New Top-cooled Packaging Technology for RF Power Devices to Further Reduce the Size of 5G Wireless Products
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Update time : 2023-06-12 14:51:33
NXP Semiconductors announced a family of top-cooled RF amplifier modules with innovative packaging technologies that help create thinner and lighter wireless products for 5G infrastructure. Smaller sized base stations improve ease and affordability of installation while enabling more discrete integration into the environment. NXP's family of GaN multi-chip modules combined with a new top cooling solution for RF power devices will not only help reduce the thickness and weight of radio products by more than 20 percent, but also reduce the carbon footprint of 5G base station manufacturing and deployment.
Top-cooling technology presents a significant opportunity for the wireless infrastructure industry, with which we can combine high power functionality with excellent thermal performance to create RF subsystems with smaller dimensions," said Pierre Piel, vice president and general manager of NXP's RF Power business unit. Solutions based on this innovative technology allow us to deploy greener base stations while ensuring the network density needed to achieve the full performance benefits of 5G."
NXP's new top-cooled devices offer significant design and manufacturing advantages, such as the absence of dedicated RF shielding, the ability to use cost-effective, streamlined printed circuit boards, and the separation of thermal management from RF design. These features help network solution providers build thinner and lighter 5G wireless products for mobile network operators, while reducing the overall product design cycle.
NXP's first top-cooled RF power module family is designed for the 32T32R, 200W RF, covering the 3.3GHz to 3.8GHz frequency range. The devices combine NXP's proprietary LDMOS and GaN semiconductor technologies for high gain, high efficiency and broadband performance, delivering 31 dB of gain and 46% efficiency at 400 MHz instantaneous bandwidth.
