The ONSemi FDD18N20LZ is an N-channel enhancement mode MOSFET. With a low on-resistance of 8.8 mΩ (typ. at 10V), it handles up to 18A continuous drain current and 200V breakdown voltage. Its fast switching speeds reduce losses. Housed in a thermally enhanced PowerPAK SC-75 package, it’s suitable for power supplies, motor control, and battery management systems.
ONSemi FDD18N20LZ's Features
The ONSemi FDD18N20LZ offers several notable features. As an N-channel enhancement mode MOSFET, it boasts a low on-resistance (RDS(on)), rated at just 8.8 mΩ typical at 10 V gate-source voltage. This low resistance minimizes power losses during operation, enhancing overall system efficiency, especially in high-current applications. It has a high drain-source breakdown voltage (V(BR)DSS) of 200 V, enabling it to handle significant voltage stresses. The device can handle continuous drain current (ID) up to 18 A, making it suitable for power-hungry circuits. With fast switching speeds, it reduces switching losses, which is beneficial in high-frequency switching applications like DC-DC converters. The FDD18N20LZ features a thermally enhanced PowerPAK SC-75 package. This package design improves heat dissipation, allowing the device to operate reliably even under high-power conditions. It also saves board space due to its small footprint, ideal for compact electronic designs. Furthermore, the device has good gate charge characteristics, optimizing its drive requirements. Its rugged design provides robust operation against transient voltage spikes and electrical overstress. These combined features make the ONSemi FDD18N20LZ a reliable and efficient choice for various power management and switching applications.
ONSemi FDD18N20LZ's Applications
The ONSemi FDD18N20LZ, a N-channel enhancement mode field effect transistor, has diverse applications. In power supply circuits, it's excellent for DC-DC converter topologies. Its low on-resistance helps reduce power losses, making it suitable for high-efficiency power conversion systems in servers and industrial equipment, where stable power delivery is crucial. In motor control applications, the FDD18N20LZ enables precise switching to drive motors. Whether in small robotic systems or household appliances like fans and pumps, it can handle the current requirements while maintaining fast switching speeds to control motor speed and direction effectively. For battery-powered devices such as laptops and mobile power banks, this transistor plays a key role in battery charging and discharging management. It can handle high voltage spikes during charging and regulate the current flow to protect the battery and optimize its lifespan. Moreover, in lighting control systems, especially LED drivers, the FDD18N20LZ allows for efficient dimming control by modulating the current supplied to the LEDs. Its reliable switching performance across various voltage and current ranges makes it a versatile component in numerous electronic systems.
ONSemi FDD18N20LZ's Attributes
| Series |
UniFET™ |
Product Status |
Active |
| FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
125mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
40 nC @ 10 V |
| Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1575 pF @ 25 V |
| Power Dissipation (Max) |
89W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
| Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Base Product Number |
FDD18N20 |
ONSemi FDD18N20LZ's Category- Power MOSFET Transistor
A Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a crucial component in modern power electronics. Unlike traditional bipolar transistors, it is a voltage-controlled device, which offers several advantages in terms of ease of operation and efficiency.
Structure and Working Principle
Power MOSFETs typically have a vertical structure with multiple doped semiconductor layers. In an N-channel Power MOSFET, the basic structure consists of an n+ source layer, a p-type body layer, an n- drift region, and an n+ drain layer. The gate terminal is separated from the body by a thin oxide layer, creating a metal-oxide-semiconductor capacitance. When a positive voltage is applied to the gate relative to the source (VGS), it induces a negative charge in the p-type body near the oxide interface, creating an n-channel. This channel allows electrons to flow from the source to the drain, enabling current conduction. The higher the VGS, the wider the channel and the greater the drain current (ID), following a relationship described by the equation ID=K(VGS−VT)2, where K is a device constant and VT is the threshold voltage.
Key Characteristics
- Low On-Resistance (RDS(on)): Power MOSFETs exhibit low resistance when fully turned on, minimizing power losses in the form of heat.
- High Switching Speed: They can switch on and off rapidly, making them ideal for high-frequency applications such as switching power supplies.
- Voltage and Current Ratings: Capable of handling significant drain-source voltages (up to several hundred volts) and drain currents (ranging from a few amperes to over a hundred amperes depending on the device).
- Thermal Characteristics: The positive temperature coefficient of RDS(on) provides thermal stability, as an increase in temperature leads to an increase in resistance, which helps in current sharing in parallel configurations.
Advantages
- Simple Gate Drive: Requires only a small voltage to control, reducing the complexity of the drive circuit.
- High Efficiency: Low on-resistance and fast switching result in reduced power losses, improving overall system efficiency.
- No Secondary Breakdown: Unlike some bipolar transistors, Power MOSFETs are not prone to secondary breakdown, enhancing reliability.
Disadvantages
- Limited Reverse Blocking: Generally have low reverse voltage blocking capabilities, often requiring additional components like diodes for protection in certain circuits.
- Susceptible to Electrostatic Discharge (ESD): Care must be taken during handling to prevent damage from static electricity.
Applications
Power MOSFETs find widespread use in various fields:
- Power Supplies: In switch mode power supplies (SMPS) for efficient voltage conversion.
- Motor Control: To regulate the speed and direction of electric motors in applications ranging from industrial machinery to electric vehicles.
- Battery Management: For controlling the charging and discharging processes in battery packs.
- Audio Amplifiers: Due to their low noise and high efficiency, they are used in power amplifier stages.
The ONSemi FDD18N20LZ is a prime example of a Power MOSFET. With an 18A continuous drain current rating and a 200V drain-source breakdown voltage, it offers robust performance. Its ultra-low on-resistance of just 8.8 mΩ (typical at 10V gate-source voltage) ensures minimal power losses. Housed in a thermally enhanced PowerPAK SC-75 package, it provides excellent heat dissipation while saving board space. This makes it suitable for a wide array of applications, from DC-DC converters in servers to motor control circuits in household appliances, embodying the key advantages of Power MOSFET technology.
WlS Electronic has a vast inventory of ONSemi FDD18N20LZ. We assure you that these are genuine and brand-new components procured directly from ONSemi. Should you need it, we are able to offer quality test reports for FDD18N20LZ. If you wish to obtain a quotation, all you need to do is fill in the required quantity, your contact name, and your email address in the quick quotation form on the right-hand side. Our sales representatives are committed to getting in touch with you within 12 hours. You have the option to contact us online at any time. Additionally, you can send us an email at: SALES@WLSCHIP.COM.
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