First 8-inch SiC Substrate Launched in Taiwan, China
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Update time : 2023-06-07 14:04:33
According to media reports, Taisic Materials (Shengxin Material Technology), a subsidiary of Foxconn, has successfully manufactured the first 8-inch SiC substrate in Taiwan, China, where the company previously only had the ability to manufacture 6-inch SiC substrates.
Founded in 2020, Taisic Materials is one of the few manufacturers in Taiwan, China, that can produce both 6-inch conductive and semi-insulated SiC substrates, and has a technological advantage in the area of high quality long crystal. It has successfully grown 4-inch diameter SiC crystals since shortly after its establishment, and then started to move toward 6-inch.
According to previous reports, Shengxin's 6-inch SiC substrate capacity last year was around 400 wafers per month, and then increased the number of SiC long crystal furnaces to 65, with 5 from the U.S., 10 from Japan, and the remaining 50 from its own production in cooperation with its shareholder, Kenmec, with 65 long crystal furnaces capable of reaching a monthly capacity of 1,200 to 1,600 wafers.
As Shengxin's notable performance in the SiC field has also triggered Hon Hai's attention. In July last year, Hon Hai Group, in order to gain a long-term competitive advantage in the automotive semiconductor field and further secure the supply of SiC wafers, therefore acquired a 10% equity stake in Shengxin Materials through Hongyuan International Investment at a price of NTD 100 per share, with a cumulative price of NTD 500 million. The completion of the acquisition of Shengxin Materials is an important step for Hon Hai to deepen its presence in the semiconductor and automotive fields.
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