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IRF7416TRPBF by Infineon-Single MOSFETs

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Update time : 2025-04-09 15:00:22
 
The IRF7416TRPBF from Infineon Technologies is a P-channel power MOSFET with outstanding performance. It adopts the advanced fifth-generation HEXFET technology, which effectively reduces the on-resistance and significantly improves the energy utilization efficiency. It has excellent current-carrying capacity and can handle different working conditions. It performs remarkably well in terms of switching speed and is suitable for high-frequency switching circuits. 
 

Infineon Technologies IRF7416TRPBF's Features

  • Advanced Technology: Utilizing the fifth-generation HEXFET technology and advanced processing techniques, it achieves an ultra-low on-resistance per unit silicon area. This reduces the resistance loss during conduction and improves the energy utilization efficiency.
  • High Current Carrying Capacity: It has different levels of continuous drain current carrying capacity at different temperatures. When the ambient temperature TA is 25°C and the gate-source voltage VGS is -10V, the continuous drain current ID can reach -10A. When TA is 70°C and VGS is -10V, ID is -7.1A. In addition, the pulsed drain current IDM can reach -45A, which can cope with short-term large current surges.
  • High Voltage Withstand Capacity: The drain-source breakdown voltage V(BR)DSS is -30V, enabling it to operate stably within a certain voltage range and adapt to various voltage environments.
  • Low On-resistance: Under the conditions of VGS being -10V and ID being -5.6A, the typical value of the static drain-source on-resistance RDS(on) is 0.02Ω, effectively reducing the power loss during conduction and improving the circuit efficiency.
  • Fast Switching Characteristics: It has a relatively short switching time. The typical value of the turn-on delay time td(on) is 18ns, the rise time tr is 49ns, the turn-off delay time td(off) is 59ns, and the fall time tf is 60ns. It is suitable for circuits with high requirements for the switching frequency.
  • High Avalanche Energy Withstand Capacity: The single-pulse avalanche energy EAS is 370mJ, having a certain avalanche resistance. When there is an abnormal voltage in the circuit, it can withstand a certain amount of energy impact, enhancing the reliability of the device.
  • Good Dynamic Characteristics: It has a dynamic dv/dt rating, which can better cope with voltage changes in the circuit, reduce the impact of voltage surges on the device, and ensure the stable operation of the circuit.
  • Outstanding Diode Characteristics: The integrated body diode has a certain current carrying capacity. The maximum continuous source current (body diode) IS is -3.1A, and the maximum pulsed source current (body diode) ISM is -45A. The typical value of the diode forward voltage VSD is -1.0V, the typical value of the reverse recovery time trr is 56ns, and the typical value of the reverse recovery charge Qr is 99nC, enabling the body diode to effectively perform functions such as freewheeling in the circuit.
  • Packaging Improvement: Adopting the SO-8 package, through a customized lead frame, it enhances the thermal characteristics and multi-chip capabilities, and performs excellently in various power application scenarios. In typical printed circuit board (PCB) installation applications, the power consumption is greater than 0.8W, which can meet some scenarios with higher power requirements.
  • Welding Adaptability: This packaging design is suitable for vapor phase, infrared, or wave soldering technologies, making it convenient to install on the circuit board and improving the production efficiency.
  • Environmental-friendly Design: It adopts a lead-free design, which complies with environmental protection requirements and helps to reduce the pollution of electronic products to the environment.
  • Packaging Form: It provides a tape and reel packaging, which is convenient for automated production, storage, and transportation, reducing the production cost and improving the production efficiency.
 

Infineon Technologies IRF7416TRPBF's Applications

The Infineon Technologies IRF7416TRPBF, a P-channel power MOSFET, has several applications due to its features such as low on-resistance, fast switching speed, and high current handling capabilities. Here are some of its common applications:
  1. Power Management Circuits:
    • DC-DC Converters: In both step-down (buck) and step-up (boost) DC-DC converters, the IRF7416TRPBF can be used as a switching element. Its low on-resistance helps reduce power losses during the conduction phase, improving the overall efficiency of the converter. For example, in portable electronic devices like smartphones, tablets, and laptops, where efficient power conversion is crucial for battery life, this MOSFET can play a vital role in managing the power supply between different voltage levels.
    • Power Distribution Networks: It can be used to control the flow of power in power distribution systems on printed circuit boards (PCBs). By turning on or off at the appropriate times, it enables the isolation or connection of different power domains, ensuring proper power delivery to various components and helping to manage power consumption.
  2. Motor Control:
    • Brushless DC (BLDC) Motors: In BLDC motor control circuits, the IRF7416TRPBF can be part of the inverter stage. Its fast switching speed allows for precise control of the motor's speed and direction. It can switch the current flowing through the motor windings at high frequencies, enabling smooth and efficient motor operation. This is useful in applications such as electric fans, pumps, and servo motors in industrial automation, robotics, and home appliances.
    • DC Motor Control: For traditional DC motors, it can be used in H-bridge circuits to control the motor's rotation direction and speed. The MOSFET's ability to handle high currents and its low on-resistance make it suitable for driving DC motors in various applications, from small hobby motors to larger motors in automotive window regulators and seat adjustment mechanisms.
  3. Battery Charging and Discharging Circuits:
    • Portable Battery Chargers: When designing chargers for portable devices, the IRF7416TRPBF can be used to manage the charging process. It can control the current and voltage supplied to the battery, ensuring safe and efficient charging. Its high voltage and current ratings make it suitable for handling different battery chemistries and capacities.
    • Battery Management Systems (BMS): In battery packs for electric vehicles, energy storage systems, and other applications, BMSs use MOSFETs like the IRF7416TRPBF to monitor and control the charging and discharging of individual battery cells or the entire battery pack. The MOSFET can be used to disconnect the battery from the load or charger in case of overcharging, over-discharging, or other abnormal conditions, protecting the battery and ensuring its longevity.
  4. Audio Amplifiers:
    • Class D Amplifiers: In class D audio amplifiers, which are known for their high efficiency, the IRF7416TRPBF can be used as a switching device. Its fast switching characteristics allow for the conversion of the audio signal into a series of pulses, which are then filtered to reproduce the original audio. The low on-resistance helps reduce power losses during operation, resulting in a more efficient and cooler-running amplifier.
  5. Lighting Applications:
    • LED Drivers: In LED lighting systems, the IRF7416TRPBF can be used in LED driver circuits to control the current flowing through the LEDs. By precisely regulating the current, it ensures consistent brightness and color temperature of the LEDs. Its high voltage and current capabilities make it suitable for driving multiple LEDs in series or parallel configurations, whether in indoor lighting, outdoor lighting, or automotive lighting applications.
  6. General Switching and Load Control:
    • Solid-State Relays (SSRs): The MOSFET can be used as the switching element in SSRs, replacing traditional electromechanical relays. SSRs using the IRF7416TRPBF offer advantages such as faster switching, longer lifespan, and no mechanical wear. They can be used in various applications where electrical isolation and reliable switching are required, such as industrial control systems, home automation, and power control panels.
    • Load Switching in Electronic Devices: It can be used to turn on or off various loads in electronic devices, such as hard drives, optical drives, and other peripherals. By providing a low-resistance path when turned on, it ensures efficient power delivery to the load, and when turned off, it isolates the load from the power source, saving power and protecting the device.
 
 

Infineon Technologies IRF7416TRPBF's Attributes

Functional Packing TAPE & REEL          Add Product Info Planar Mosfet - SO-8
Package Name Marketing SO-8 Msl 1
HalogenFree yes Customer Info STANDARD
Fgr F9Z Product Classification COM
Product Status Info Active Hfgr P
PackageName SO8 PbFree yes
Moisture Prot Pack NON DRY Ordering Code SP001554262
Four Block Package Name PG-DSO-8-902 Rohs Compliant yes
Opn IRF7416TRPBF Completely PbFree yes
Sap Matnr Sali SP001554262    
 

Infineon Technologies IRF7416TRPBF's Datasheet


 

Infineon Technologies IRF7416TRPBF's Category-Single MOSFETs

Single MOSFETs, that is, single metal-oxide-semiconductor field-effect transistors, play a crucial role in the field of electronics. As an independent semiconductor device, it has a unique working mechanism. Through the change of the gate voltage, Single MOSFETs can precisely control the current flow between the source and the drain, just like an intelligent current valve. Such devices possess many remarkable characteristics. Firstly, their switching speed is extremely fast, especially when dealing with digital signals. They can respond rapidly to commands and achieve a quick transition of the circuit state, which is of great significance for improving the operation efficiency of the system. Secondly, Single MOSFETs have extremely low power consumption. During long-term operation, they can effectively reduce energy consumption and heat generation, enhancing the stability and reliability of the system. Moreover, it has a high-density capacitance, and this characteristic makes it perform outstandingly in large-scale integrated applications, enabling the realization of complex circuit functions within a limited space. The application fields of Single MOSFETs are extremely extensive. In digital circuits, it is widely used to implement functions such as logic gates and memory chips, and it is the foundation for constructing the core components of modern computers and electronic devices. In analog circuits, it can be used as an analog switch. With its advantages such as reliability, zero gate current, and high adjustable output impedance, it ensures the precise processing of analog signals. In power electronic devices, it can be used for battery reverse connection protection, AC power supply switching, etc., safeguarding the safe and stable operation of the power system.

The Infineon Technologies IRF7416TRPBF is a highly notable Single MOSFETs product. Infineon Technologies enjoys a long-standing reputation in the semiconductor field, and this IRF7416TRPBF inherits the brand's excellent quality. It has outstanding electrical performance, can meet the requirements of various complex application scenarios, provides a reliable choice for engineers in circuit design, and helps to achieve more efficient and stable electronic systems.
 

IRFBC30 vs IRF7416TRPBF

Technical Parameter
Mfr Part IRFBC30 +BOM IRF7416TRPBF +BOM
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
Manufacturer Vishay Infineon Technologies
Series - HEXFET
Packaging Tube Tape & Reel (TR)
Product Status Obsolete Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 30 V
Current - Continuous Drain (Id) @ 25℃ 3.6A (Tc) 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.2Ohm @ 2.2A, 10V 20mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA 1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 92 nC @ 10 V
Vgs (Max) 0V 0V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25 V 1700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 74W (Tc) 2.5W (Ta)
Operating Temperature -55 ℃ ~ 150 ℃ (TJ) -55 ℃ ~ 150 ℃ (TJ)
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220AB 8-SOP
Package / Case TO-220-3 8-SOIC (0.154", 3.90mm Width)

WlS Electronic has a vast inventory of Infineon Technologies IRF7416TRPBF. We assure you that these are genuine and brand - new components procured directly from Infineon Technologies. Should you need it, we are able to offer quality test reports for IRF7416TRPBF. If you wish to obtain a quotation, all you need to do is fill in the required quantity, your contact name, and your email address in the quick quotation form on the right - hand side. Our sales representatives are committed to getting in touch with you within 12 hours. You have the option to contact us online at any time. Additionally, you can send us an email at: SALES@WLSCHIP.COM.
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