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Micron: Company's automotive-grade LPDDR5 DRAM memory and UFS 3.1 products have been applied to Ideal L9

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Update time : 2022-08-04 17:22:27
        Micron Technology announced on Aug. 3 that its automotive-grade high-performance LPDDR5 DRAM memory and UFS 3.1 products based on 3D TLC NAND technology have been applied to the Ideal L9, the latest full-size smart flagship SUV from Ideal Motors.
         Micron Technology said the LPDDR5 and UFS 3.1 solutions enable the RISO L9's Advanced Driver Assistance System (ADAS) to achieve up to L4 autonomous driving. In addition, the RISO L9 intelligent cockpit system also integrates Micron's automotive-grade LPDDR4 and UFS 2.1 technologies; the RISO L9 cross-domain control unit is also equipped with Micron's NOR flash memory and eMMC technology. 
        The data shows that Micron's automotive-grade LPDDR5 offers up to 50% bandwidth improvement compared to Micron's LPDDR4. LPDDR5 also offers better energy efficiency, reducing power consumption by up to 60% compared to LPDDR4, helping to provide longer range per charge.
        The latest generation of Desay SV ADAS technology in the Ideal L9 is said to be equipped with Micron memory, enabling high-speed computing performance and supporting autonomous driving functions up to L4 level.



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