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Nexperia Announces Market Leading Efficiency Wafer-Level 12 and 30V MOSFETs

Update time : 2022-07-29 14:52:05

Nexperia, a high-capacity manufacturing specialist in basic semiconductor devices, has announced the PMCB60XN and PMCB60XNE 30V N-channel small signal Trench MOSFETs in an ultra-compact wafer-level DSN1006 package with market-leading RDS(on) characteristics for longer-lasting power when space is limited and battery life operation is critical. for longer lasting power when space is limited and battery life operation is critical.

Ideal for highly miniaturized electronics such as smartphones, smartwatches, hearing aids and headphones, the new MOSFETs address the trend toward smarter, more feature-rich devices that meet the need for increased system power consumption.
The RDS(on) offers a 25% performance improvement over competitive devices, minimizing power consumption and improving load switching and battery management efficiency. Its superior performance is also demonstrated by reduced self-heating, which enhances the user comfort of wearable devices.
Specifically, the PMCB60XN and PMCB60XNE have a maximum RDS(on) of 50mΩ and 55mΩ at VGS = 4.5V, respectively, resulting in the lowest single-chip area on-resistance among similar 30V MOSFETs on the market. In addition, the PMCB60XNE provides rated 2kV ESD protection (human body model - HBM) when integrated into the small 1.0mm × 0.6mm × 0.2mm DSN1006 form factor. Both MOSFETs are rated for drain currents up to 4A.
In addition to these two MOSFETs in the DSN1006 package, Nexperia also offers a 12V N-channel Trench MOSFET in the DSN1010 package, the PMCA14UN, which has a maximum RDS(on) of 16mΩ at VGS = 4.5 V and is available in a 0.96mm × 0.96mm × 0.24mm package. The PMCA14UN has a maximum RDS(on) of 16 mΩ at VGS = 4.5 V and market-leading efficiency in a 0.96 mm × 0.96 mm × 0.24 mm (SOT8007) size.

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