On July 19, Samsung Electronics announced that it has completed the development of the industry's first GDDR7 DRAM. The product will first be mounted on the next-generation systems of major customers for validation during the year, thereby driving future growth in the graphics card market and further consolidating its technological position in the field.
According to the official website, Samsung Electronics GDDR7 can achieve a bandwidth of 1.5 terabits per second (TBps), 1.4 times that of GDDR6 1.1 TBps, and a rate of up to 32 Gbps per data I/O (Input/Output) port.The product adopts the Pulse Amplitude Modulation (PAM3) signaling method, replacing the non-return-to-zero (NRZ) signaling method of its predecessors, to improve performance. The PAM3 signaling method can transmit up to 50% more data than the NRZ signaling method in the same signaling period.
Compared to GDDR6, GDDR7 is designed with energy-saving technologies suitable for high-speed operation, improving energy efficiency by 20%. For power-conscious devices such as notebook PCs, Samsung Electronics offers a low operating voltage option.
Following Samsung Electronics' development of the GDDR6 16Gb at a speed of 24 gigabits per second (Gbps) in 2022, the GDDR7 16Gb product will offer the highest speed of Samsung Electronics' memory to date, 32 Gbps. Innovations in integrated circuit (IC) design and packaging technology have improved performance stability at high speed operation.
Yongcheol Bae, executive vice president of Samsung Electronics' memory product planning team, said the company's GDDR7 products will help enhance the experience of users who require high-performance graphics memory, such as workstations, personal computers, and gaming consoles, and are expected to expand into future applications such as artificial intelligence, high-performance computing, and automotive. The new generation of graphics memory will be brought to market based on demand, and the company hopes to continue to maintain its cutting-edge technological capabilities in the field.