ST Mass Production of e-mode PowerGaN HEMT Devices
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Update time : 2023-07-20 11:22:35
The first two products in the series, the SGT120R65AL and SGT65R65AL, are industrial grade 650V normally disconnected G-HEMTs in PowerFLAT 5×6 HV surface mount packages. They have current ratings of 15A and 25A, respectively, and typical on-resistance (R DS(on)) at 25°C is 75mΩ and 49mΩ.
In addition, a total gate charge of 3nC and 5.4nC and low parasitic capacitance ensure low turn-on/turn-off energy loss. Kelvin source connections enable optimized gate drive? drive. In addition to reducing the size and weight of power supplies and adapters, the two new GaN transistors offer higher efficiency, lower operating temperatures and longer life.
In the coming months, ST will introduce new PowerGaN variants, automotive-compliant devices, as well as other power packaging options, including the PowerFLAT 8×8 DSC and LFPAK 12×12 for high-power applications.
ST's G-HEMT devices facilitate the transition to GaN wide bandgap technology in power conversion. GaN transistors with the same breakdown voltage and R DS(on) as silicon alternatives enable lower total gate charge and parasitic capacitance with zero reverse recovery charge.
These characteristics improve efficiency and enhance switching performance, allowing higher switching frequencies, which in turn allows smaller passive components and thus higher power density. As a result, applications can become smaller and perform better. In the future, GaN is expected to enable new power conversion topologies that will further improve efficiency and reduce power losses.
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