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STM and MACOM successfully Test Produce RF GaN-on-Si Prototype

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Update time : 2022-05-21 10:48:33
          On May 19, STM, the world's leading semiconductor company serving multiple electronic applications, and MACOM Technology Solutions Holdings Co., Ltd., the world's leading provider of semiconductor solutions for telecommunications, industry, national defense and data centers, announced the successful manufacture of RF GaN-on-Si prototype chips. Based on this achievement, STM and MACOM will continue to work together to deepen cooperation.
          RF GaN-on-Si offers high potential for 5G and 6G infrastructure. At present, the long-standing RF power amplification technology, namely LDMOS, dominated the early RF PA. GaN can provide these RF power amplifiers with excellent RF characteristics and much higher output power than LDMOS. In addition, it can be manufactured on Silicon or SIC wafers. Due to the competition of power electronics for SiC wafers and its special processing technology, RF SiC Based Gan on SiC may be more expensive.RF GaN-on-Si technology being developed by STM and MACOM is expected to provide competitive performance and realize large-scale economic benefits through integration with standard semiconductor process flow. The prototype wafers and devices manufactured by STM have reached the cost and performance goals, and can effectively compete with the existing LDMOS and silicon carbide based GaN technologies in the market. These prototypes are now entering the next important milestone - Qualification and industrialization. STM aims to reach these milestones by 2022. With this progress, STM and MACOM have begun to discuss further expanding their cooperation to accelerate the provision of advanced RF GaN-on-Si products to the market.
          Edoardo Merli, general manager and executive vice president of Italian French semiconductor power transistor department, said: "We believe that this technology has now reached the commercial performance level and process maturity, can effectively challenge the existing LDMOS and SiC based GaN, and we can provide attractive cost and supply chain advantages for mass applications, including wireless infrastructure. The commercialization of RF RF GaN-on-Si products is the next important milestone in our cooperation with MACOM. With the continuous progress, we look forward to full implementation Now this exciting technology has great potential. " MACOM president and CEO Stephen g. Daly said:" together, we continue to make good progress in promoting the commercialization and mass production of RF GaN-on-Si technology. Our cooperation with STM is an important part of our RF power strategy. I believe we can win market share in the target application of RF GaN-on-Si technology to meet the technical requirements. "
 
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