Transphorm Released Simulation Model of Industry's First 1200-Volt GaN-on-Sapphire Device
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Update time : 2023-06-01 15:35:52
Transphorm, Inc., a pioneer and global supplier of highly reliable, high-performance gallium nitride (GaN) power conversion products, announces the release of its 1200-volt power tube simulation model and initial datasheet. TP120H070WS power tubes are the only 1200-volt GaN-on-Sapphire power semiconductors introduced to date. Sapphire power semiconductor to date, leading the category. The launch demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems already commonly used in industrial, datacom and renewable energy markets. These applications benefit from the higher power density and superior reliability, equal or better performance, and more reasonable cost of a 1200 volt GaN device than alternative technologies. 98.7% efficiency, surpassing mass-produced SiC MOSFETs with similar ratings.
The innovative 1200 volt technology also demonstrates Transphorm's leadership in GaN power conversion. A vertically integrated model, its own epitaxial wafer production capabilities, and proprietary process technology, combined with decades of engineering expertise, enable the company to bring to market a portfolio of the highest-performing GaN devices with significant differentiation in four areas: manufacturability, ease of drive, ease of design, and reliability.
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