Industry News

Vishay Introduces New Third Generation 650 V SiC Schottky Diodes to Improve Efficiency and Reliability of Switching Power Supply Designs

Update time : 2023-05-27 10:25:09

Vishay Intertechnology, Inc. has announced the introduction of 17 new third-generation 650 V silicon carbide (SiC) Schottky diodes, designed in a hybrid PIN Schottky (MPS) architecture, offering high inrush current protection with low forward voltage drop, capacitive charge and The low reverse leakage current contributes to the energy efficiency and reliability of switching power supply designs.

The new generation of SiC diodes released today includes 4A to 40A devices in TO-22OAC 2L and TO-247AD 3L plug-in packages and D2PAK 2L (TO-263AB 2L) surface mount packages. Due to the MPS architecture, the device forward voltage drop is 0.3V lower than the previous generation solution, and the product of forward voltage drop and capacitive charge, the important factor of merit (FOM) for power efficiency, is 17% lower compared to the previous generation solution.
Typical reverse leakage current of the diode is 30% lower at room temperature and 70% lower at high temperatures compared to close competitor solutions. This results in lower conduction losses and ensures high energy efficiency during light and no-load periods in the system. Unlike ultra-fast recovery diodes, third generation devices have virtually no recovery drag, enabling further efficiency gains.
Compared to silicon diodes with comparable breakdown voltages, SiC diodes have high thermal conductivity, low reverse currents and short reverse recovery times. The diode's reverse recovery time is virtually unaffected by temperature variations and can be operated at temperatures up to +175 °C without any change in energy efficiency due to switching losses.
Typical applications include AC/DC power factor correction (PFC) and DC/DC UHF output rectification in FBPS and LLC converters for power generation and exploration applications. The devices are highly reliable, RoHS compliant, halogen free, and have passed 2000 hours of high temperature reverse bias (HTRB) testing and 2000 thermal cycling temperature cycles, twice the test time and number of cycles specified in AEC-Q101.

Previous : Developing semiconductor chip business, Sony may build second factory in Kumamoto, Japan

Next : Meta Launched its Own AI Op-amp Chip: MTIA v1

Microchip PIC18F2321-I/SS Microcontroller

Mar .17.2025

Ideal for power-conscious applications such as battery-powered devices, the PIC18F2321-I/SS includes advanced low power oscillator controls and an 8 MHz internal RC oscillator. Its feature set makes it suitable for a variety of industries including instru

ONSemi RURG3060CC - Rectifier Diodes

Mar .14.2025

The ONSemi RURG3060CC is an ultrafast dual rectifier diode. It features a fast reverse recovery time of 60 nanoseconds at a forward current of 30A, a low forward voltage drop of 1.5 volts at 25°C, and a high reverse voltage rating of 600V. It's suitable f

SN74LV8153N Texas Instruments - Shift Registers

Mar .12.2025

The Texas Instruments SN74LV8153N is a serial-to-parallel data converter. It features single-line serial data input compatible with UART format, has flexible address programming via A0 - A2 pins, offers selectable open-drain or push-pull outputs, and inte

TC4427EPA Microchip - Gate Drivers ICs

Mar .10.2025

The TC4427EPA is a high-performance MOSFET driver that offers exceptional speed and efficiency for demanding applications. With its wide voltage range and high peak output current, this driver is ideal for power electronics and motor control systems that

About Us

About Us What we do Quality People

Products

CHIP/IC Active devices Passive device Components OTHER

China electronic components supplier----Wah Luen Shing Electronic.----www.wlschip.com

Leave a message