Industry News

Samsung Announces Its Largest Capacity 32Gb DDR5 DRAM in the 12nm Class

Views : 41
Update time : 2023-09-06 11:09:08
        On September 1, 2023, Samsung announced the development of its highest-capacity 32Gb DDR5 DRAM (DDR5 DRAM: fifth-generation Double Data Rate Synchronous Dynamic Random Access Memory) using 12-nanometer (nm) class process technology. This achievement follows Samsung's start of mass production of 12nm-class 16Gb DDR5 DRAM in May 2023, which solidifies Samsung's position in the field of developing next-generation DRAM memory technology and opens a new chapter in the era of high-capacity memory.
 
 
        "Building on Samsung's newly introduced 12nm-class 32Gb memory, we were able to develop a solution that realizes a 1TB memory module, which helps to meet the growing demand for high-capacity DRAM memory in the age of artificial intelligence and big data." SangJoon Hwang, Executive Vice President of Memory Development Group, Memory Division, Samsung Electronics, said, "We will continue to develop memory solutions to break through the bottleneck in memory technology through differentiated process and design technologies." 
        Samsung has increased its memory capacity 500,000 times over the past 40 years since 1983, when it developed the first 64 kilobit (Kb) memory. The latest development of 32Gb DDR5 memory particles, which uses cutting-edge process technology, increased integration density and optimized package design, doubles the capacity of Samsung's single DRAM memory particles in the same package size compared to DDR5 16Gb particles.
        In particular, in the past, DDR5 128GB memory modules made with 16Gb memory particles required a through-silicon vias (TSV) process. Now, by using the newly developed 32Gb memory particles, it is possible to produce 128GB memory modules even without using the through-silicon via (TSV) process. The power consumption of the 128GB memory module has been reduced by approximately 10% compared to a 128GB memory module using a 16Gb memory package. This technological breakthrough makes this product the preferred solution for energy-efficiency-conscious enterprises such as data centers.
        Based on the 12nm-class 32Gb DDR5 DRAM, Samsung plans to continue to expand its high-capacity memory product lineup to meet the continuously growing needs of the high-performance computing and IT industries. By offering 12nm-class 32Gb memory to data centers, as well as to customers adopting applications such as artificial intelligence and next-generation computing, Samsung hopes to solidify its position at the forefront of the next-generation memory market. Going forward, the product will also play a vital role in Samsung's long-term collaborations with other core industry partners. 
        Mass production of the new 12nm-class 32Gb DDR5 DRAM is scheduled to begin by the end of this year.
 
Related News
Read More >>
Stmicroelectronics LSM6DSOTR -Motion Sensor Stmicroelectronics LSM6DSOTR -Motion Sensor
Apr .30.2025
The STMicroelectronics LSM6DSOTR is a 6-axis inertial measurement unit (IMU) that combines a 3-axis accelerometer and a 3-axis gyroscope in a single package. This analog IC is designed for a wide range of applications that require accurate motion sensing,
FDMS3008SDC |Fairchild Semiconductor/ onsemi| Low/Medium Voltage MOSFETs FDMS3008SDC |Fairchild Semiconductor/ onsemi| Low/Medium Voltage MOSFETs
Apr .28.2025
The Fairchild Semiconductor/onsemi FDMS3008SDC is a high - performance N - Channel MOSFET. With a low on - resistance (rDS(on)​) and the ability to handle high currents, it offers excellent power efficiency. Housed in a Dual CoolTM package for efficient h
W25Q256JVEIQ by Winbond Electronics | Flash W25Q256JVEIQ by Winbond Electronics | Flash
Apr .25.2025
The Winbond W25Q256JVEIQ is a 256M-bit serial flash memory. It supports Standard, Dual, and Quad SPI modes with a high - speed 133MHz clock, enabling fast data transfer. Operating within 2.7V - 3.6V, it features low power consumption and a wide operating
EP2C5T144C8N Intel / Altera -FPGAs EP2C5T144C8N Intel / Altera -FPGAs
Apr .23.2025
The Intel/Altera EP2C5T144C8N is a versatile FPGA from the Cyclone II family. With 4,608 logic elements, it enables efficient implementation of complex digital designs. Operating at up to 260 MHz, it offers high - speed performance. Housed in a 144 - pin