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SK Hynix Begins World's First Data Center Compatibility Verification of 5th Generation 10nm Class DDR5 DRAM

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Update time : 2023-05-31 11:03:10
        On May 30, 2023, SK Hynix announced that it has completed the development of the fifth generation of 10nm-class (1b) technology, the most miniaturized of existing DRAMs, and has begun the "The Intel Data Center Certified memory program" by offering DDR5 server DRAMs for its technology to Intel®. Center Certified memory program".
 
 
        This program is a formal certification process for compatibility with memory products used in Intel's 4th generation Xeon® Scalable platform* for servers. 
        With DDR5 DRAM products supplied to Intel by SK Hynix operating at speeds up to 6.4Gbps (6.4 gigabits per second), the company's technical team has achieved the highest speed of DDR5 DRAM currently available on the market. This represents a 33% increase in data processing speed compared to the initial stage DDR5 DRAM prototype*. 
        In addition, the company has adopted the "HKMG (High-K Metal Gate)* process for this 1b DDR5 DRAM, reducing power consumption by more than 20% compared to 1a DDR5 DRAM. 
        SK Hynix emphasizes, "With the successful development of 1b technology, we will be able to supply DRAM products with both high performance and high performance-to-power ratio* to customers worldwide." 
        Just as SK Hynix introduced the fourth generation of 10nm-class (1a) DDR5 server DRAM to Intel® 4th Gen Intel® Xeon® Scalable processors in January this year and received the industry's first certification for 1b DDR5," said Jong-hwan Kim, Vice President of DRAM Development at SK Hynix. first certification, this 1b DDR5 DRAM product validation will also be successfully completed." 
        Vice President Kim added, "With forecasts that memory market conditions will improve from the second half of this year, the company will accelerate the improvement of its performance in the second half of this year with the industry's highest level of DRAM competitiveness such as 1b process mass production. It is also planned to expand the state-of-the-art 1b process for LPDDR5T and HBM3E* products in the first half of next year." 
        Dimitrios Ziakas, vice president of Intel's Memory I/O Technology Division, said, "Intel is working closely with the memory industry to validate compatibility between DDR5 DRAM and Intel platforms. 1b DDR5 DRAM from SK Hynix will be available for Intel's next-generation Xeon® scalable platform, for which the industry For the first time, the Intel data center memory certification process is underway." 
        In addition, SK Hynix said that an additional certification process is underway to adapt the 1a DDR5 DRAM, which has already completed one round of compatibility verification, to Intel's next-generation Xeon® Scalable Platform.


 
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