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Tower Semiconductor Announces Its Most Advanced 2nd Generation 65nm BCD Power Management Platform

Update time : 2022-05-16 10:41:10

Tower Semiconductor announced the expansion of its power management platform, releasing its most advanced second-generation 65nm BCD, extending the operating range to 24V and reducing RDSON by 20%. The company has also added deep trench isolation to its 180nm BCD platform, which reduces die size by 40% for voltages up to 125V. The new version addresses the growing demand for higher voltage and higher power ICs, further strengthening Tower's leading market position in power devices.

Tower's 65nm BCD platform is known as best-in-class sub-90nm BCD technology for its leadership in power performance, cost and integration competitiveness. Second-generation 65nm BCDs benefit from up to 20% reduction in power performance and die size due to reduced LDMOS RDSON for devices up to 16V and voltage scaling to 24V operation. These advancements address the need for monolithic high-power converters in the computing and consumer markets, including high-power voltage regulators for CPUs and GPUs, as well as applications such as chargers, high-power motor drives, and power converters.

The company's 180nm BCD is the industry's widest, best-in-class platform in terms of voltage coverage, isolation scheme, power performance, die size and mask count. 180nm BCD deep trench isolation scheme offers better noise immunity within a single IC, flexibility at elevated voltages, choice between multiple isolation schemes, and reduces die size by up to 40% .

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