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UMC and Avalanche Technology Launch 22nm Spin Transfer Torque MRAM

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Update time : 2022-09-16 11:53:10
        Avalanche Technology, an MRAM technology innovation company, and UMC, a semiconductor chip foundry, announced the launch of a highly reliable Persistent Static Random Access Memory (P-SRAM). This highly anticipated third-generation product platform is built on Avalanche Technology's latest generation Spin-Transfer-Torque MRAM (STT-MRAM) technology and UMC's 22nm process, offering higher density, durability, reliability and lower power consumption than existing non-volatile solutions. UMC's press release states that
        In the press release, UMC noted that the Parallel x 32 series offers a variety of density options as standard products with asynchronous SRAM-compatible read/write timings. The data is always non-volatile and features industry-leading 1014 write cycle endurance and 1,000-year shelf life (at 85°C). Both density options are available in a small form factor 142-ball FBGA (15mm x 17mm) package. The devices are JEDEC certified to ensure a wide (-40°C to 125°C) operating temperature range, and each device is subjected to 48-hour aging tests before delivery to customers. Additional certification options are available to partners.
        Danny Sabour, vice president of marketing and business development at Avalanche Technology, said the new products truly address the market's need for high ruggedness, reliability and high density in all applications without the need for external batteries, Error-Correcting Code (ECC) or wear-leveling techniques. With today's ubiquitous sensing devices and increasing data processing demands driving the need for wear-resistant, high endurance memory, development work will soon begin on further enhancements to the 16Gb single-chip solution.

 
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