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Vishay Launches a New Third Generation 650 V SiC Schottky Diode to Enhance Energy Efficiency and Reliability in Switching Power Supply Design

Update time : 2023-05-24 16:08:07

Recently, Vishay Intertechnology, Inc. announced the launch of 17 new third-generation 650V silicon carbide Schottky diodes. The Vishay Semiconductors device adopts a hybrid PIN Schottky structure design, which has high surge current protection ability, low forward voltage drop, capacitive charge, and reverse leakage current, which helps to improve the energy efficiency and reliability of switching power supply design.

The newly released new generation SiC diodes include 4A to 40A devices, packaged in TO-22OAC 2L and TO-247AD 3L plug-in packages, and D2PAK 2L (TO-263AB 2L) surface mount packages. Due to the use of MPS structure, the forward voltage drop of the device is 0.3V lower than the previous generation solution. The product of the forward voltage drop and the capacitance charge, which is the important coefficient of excellence (FOM) of power efficiency, is 17% lower than the previous generation solution.
Compared with similar competitor solutions, the typical reverse leakage current of diodes is 30% lower at room temperature and 70% lower at high temperatures. Therefore, the conduction loss is reduced to ensure high energy efficiency during light and no load periods of the system. Unlike ultrafast recovery diodes, third-generation devices have almost no recovery lag, which can further improve efficiency.
Compared with silicon diodes with equivalent breakdown voltage, SiC diodes have higher thermal conductivity, lower reverse current, and shorter reverse recovery time. The reverse recovery time of the diode is almost unaffected by temperature changes and can operate at a high temperature of+175 ° C, without any energy efficiency changes caused by switching losses.
Typical applications of devices include AC/DC power factor correction (PFC) and DC/DC ultra-high frequency output rectification in FBPS and LLC converters in power generation and exploration applications. The device has high reliability, complies with RoHS standards, is halogen-free, and has passed 2000 hours of high-temperature reverse bias (HTRB) testing and 2000 thermal cycling temperature cycling tests. The testing time and cycling times are twice that specified by AEC-Q101.

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