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Vishay Introduces New Third Generation 650 V SiC Schottky Diodes to Improve Efficiency and Reliability of Switching Power Supply Designs

Update time : 2023-05-24 11:25:27

May 23, 2023 - Vishay Intertechnology, Inc. (NYSE: VSH) recently announced the introduction of 17 new third-generation 650 V silicon carbide (SiC) Schottky diodes. Schottky (MPS) structure design, high inrush current protection, low forward voltage drop, capacitive charge and reverse leakage current, help improve the efficiency and reliability of switching power supply designs.

The new generation of SiC diodes released today includes 4A to 40A devices in TO-22OAC 2L and TO-247AD 3L insert packages and D2PAK 2L (TO-263AB 2L) surface mount packages. Due to the MPS structure, the device forward voltage drop is 0.3V lower than the previous generation solution, and the forward voltage drop multiplied by the capacitive charge product, which is the important factor of merit (FOM) for power efficiency, is 17% lower compared to the previous generation solution.
Typical reverse leakage current of the diode is 30% lower at room temperature and 70% lower at high temperature compared to close competing solutions. This results in lower conduction losses and ensures high energy efficiency during light and no-load periods of the system. Unlike ultra-fast recovery diodes, third-generation devices have virtually no recovery drag, enabling further efficiency improvements.
Compared to silicon diodes with comparable breakdown voltage, SiC diodes have high thermal conductivity, low reverse current, and short reverse recovery time. Diode reverse recovery times are virtually unaffected by temperature variations and can operate at temperatures up to +175 °C without changes in energy efficiency due to switching losses.
Typical applications include AC/DC power factor correction (PFC) and DC/DC UHF output rectification in FBPS and LLC converters for power generation and exploration applications. The devices are highly reliable, RoHS compliant, halogen-free, and have passed 2000 hours of high temperature reverse bias (HTRB) testing and 2000 thermal cycling temperature cycles, twice the test time and number of cycles specified in AEC-Q101.

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